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portada Advancing Silicon Carbide Electronics Technology ii: Core Technologies of Silicon Carbide Device Processing (Materials Research Foundations) (in English)
Type
Physical Book
Publisher
Year
2020
Language
English
Pages
294
Format
Paperback
ISBN13
9781644900666
Categories

Advancing Silicon Carbide Electronics Technology ii: Core Technologies of Silicon Carbide Device Processing (Materials Research Foundations) (in English)

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Synopsis "Advancing Silicon Carbide Electronics Technology ii: Core Technologies of Silicon Carbide Device Processing (Materials Research Foundations) (in English)"

The book presents an in-depth review and analysis of Silicon Carbide device processing. The main topics are: (1) Silicon Carbide Discovery, Properties and Technology, (2) Processing and Application of Dielectrics in Silicon Carbide Devices, (3) Doping by Ion Implantation, (4) Plasma Etching and (5) Fabrication of Silicon Carbide Nanostructures and Related Devices. The book is also suited as supplementary textbook for graduate courses.Keywords: Silicon Carbide, SiC, Technology, Processing, Semiconductor Devices, Material Properties, Polytypism, Thermal Oxidation, Post Oxidation Annealing, Surface Passivation, Dielectric Deposition, Field Effect Mobility, Ion Implantation, Post Implantation Annealing, Channeling, Surface Roughness, Dry Etching, Plasma Etching, Ion Etching, Sputtering, Chemical Etching, Plasma Chemistry, Micromasking, Microtrenching, Nanocrystal, Nanowire, Nanotube, Nanopillar, Nanoelectromechanical Systems (NEMS).

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