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amorphous and crystalline silicon carbide and related materials: proceedings of the first international conference, washington dc, december 10 and 11, (in English)
Gary L. Harris
(Illustrated by)
·
Cary Y. -W Yang
(Illustrated by)
·
Springer
· Paperback
amorphous and crystalline silicon carbide and related materials: proceedings of the first international conference, washington dc, december 10 and 11, (in English) - Harris, Gary L. ; Yang, Cary Y. -W
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Synopsis "amorphous and crystalline silicon carbide and related materials: proceedings of the first international conference, washington dc, december 10 and 11, (in English)"
Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.
