Libros bestsellers hasta 50% dcto  Ver más

menu

0
  • argentina
  • chile
  • colombia
  • españa
  • méxico
  • perú
  • estados unidos
  • internacional
portada New Approaches to Reliability Qualification of Semiconductor Components under Varying and Progressive Stresses (in English)
Type
Physical Book
Publisher
Language
English
Pages
166
Format
Paperback
Dimensions
21.0 x 14.8 x 0.9 cm
Weight
0.20 kg.
ISBN13
9783736975200

New Approaches to Reliability Qualification of Semiconductor Components under Varying and Progressive Stresses (in English)

Alexander Hirler (Author) · Cuvillier · Paperback

New Approaches to Reliability Qualification of Semiconductor Components under Varying and Progressive Stresses (in English) - Hirler, Alexander

Physical Book

$ 48.26

$ 61.13

You save: $ 12.87

21% discount
  • Condition: New
It will be shipped from our warehouse between Thursday, May 30 and Friday, May 31.
You will receive it anywhere in United States between 1 and 3 business days after shipment.

Synopsis "New Approaches to Reliability Qualification of Semiconductor Components under Varying and Progressive Stresses (in English)"

In the present work, urgent issues in the reliability qualification of semiconductor devices are addressed, which particularly affect value chains such as those in the automotive industry. These have particularly high requirements for long lifetime and low failure rates of their products, which are additionally exposed to more extreme operating and environmental conditions than in most other areas of application. In particular, the question arises on how to assess a product or semiconductor technology against the requirement of an application-specific mission profile with multiple non-constant stressors. For this purpose, the behavior of failure distributions under varying and progressive stress loads is investigated and described using cumulative damage models. For the first time, the industry-wide approach of transforming non-constant mission profiles into effective constant stress and test conditions for reliability assessment and qualification can be physically justified and substantiated with measurement data. This stress transformation is exemplified using the time-dependent dielectric breakdown (TDDB) failure mechanism with the two stressors voltage and temperature; and then extended to include the use of multi-dimensional mission profiles and interdependent stressors. These measurements are performed on university metal-oxide-semiconductor (MOS) capacitors as well as on commercially available state-of-the-art transistors. Finally, it is demonstrated that the obtained findings in the field of cumulative damage can be applied to use reliability studies with ramp-stress for acceleration model verification and to determine model parameters with less time and experimental effort

Customers reviews

More customer reviews
  • 0% (0)
  • 0% (0)
  • 0% (0)
  • 0% (0)
  • 0% (0)

Frequently Asked Questions about the Book

All books in our catalog are Original.
The book is written in English.
The binding of this edition is Paperback.

Questions and Answers about the Book

Do you have a question about the book? Login to be able to add your own question.

Opinions about Bookdelivery

More customer reviews