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portada Gallium Oxide: Materials Properties, Crystal Growth, and Devices (in English)
Type
Physical Book
Publisher
Language
English
Pages
764
Format
Hardcover
Dimensions
23.4 x 15.6 x 4.3 cm
Weight
1.28 kg.
ISBN13
9783030371524

Gallium Oxide: Materials Properties, Crystal Growth, and Devices (in English)

Higashiwaki, Masataka ; Fujita, Shizuo (Author) · Springer · Hardcover

Gallium Oxide: Materials Properties, Crystal Growth, and Devices (in English) - Higashiwaki, Masataka ; Fujita, Shizuo

Physical Book

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Synopsis "Gallium Oxide: Materials Properties, Crystal Growth, and Devices (in English)"

This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga₂O₃). Ga₂O₃ has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga₂O₃ is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community.Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga₂O₃.

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All books in our catalog are Original.
The book is written in English.
The binding of this edition is Hardcover.

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