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portada gas source molecular beam epitaxy: growth and properties of phosphorus containing iii-v heterostructures (in English)
Type
Physical Book
Publisher
Year
2011
Language
English
Pages
428
Format
Paperback
Dimensions
22.9 x 15.2 x 2.3 cm
Weight
0.61 kg.
ISBN
3642781292
ISBN13
9783642781292

gas source molecular beam epitaxy: growth and properties of phosphorus containing iii-v heterostructures (in English)

Morton B. Panish (Author) · Henryk Temkin (Author) · Springer · Paperback

gas source molecular beam epitaxy: growth and properties of phosphorus containing iii-v heterostructures (in English) - Panish, Morton B. ; Temkin, Henryk

Physical Book

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Synopsis "gas source molecular beam epitaxy: growth and properties of phosphorus containing iii-v heterostructures (in English)"

Today nobody can do without modern semiconductor technology and their application in micro- and optoelectronics. Here, the technique that is able to grow thinnest and best definded layers is described by the "pope" of the method in whose laboratory it was developed. Whoever is involved in research and development or advanced studies in this fascinating field will welcome the unique volume with great interest.

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The book is written in English.
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