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portada polycrystalline semiconductors: physical properties and applications: proceedings of the international school of materials science and technology at t (in English)
Type
Physical Book
Illustrated by
Publisher
Year
2012
Language
English
Pages
248
Format
Paperback
Dimensions
23.4 x 15.6 x 1.4 cm
Weight
0.37 kg.
ISBN
3642824439
ISBN13
9783642824432

polycrystalline semiconductors: physical properties and applications: proceedings of the international school of materials science and technology at t (in English)

G. Harbeke (Illustrated by) · Springer · Paperback

polycrystalline semiconductors: physical properties and applications: proceedings of the international school of materials science and technology at t (in English) - Harbeke, G.

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Synopsis "polycrystalline semiconductors: physical properties and applications: proceedings of the international school of materials science and technology at t (in English)"

In terms of structure, the field of semiconductors spans a wide range, from the perfect order of single crystals to the non-periodic, disordered amorph- ous state. The two extremes of this range attract a large amount of inter- est. On one side, glamorous novel phenomena are being found which can only occur in specially tailored ultra-perfect periodic lattices. On the other side, the exotic and challenging nature of the amorphous state has triggered a surge of activity in recent years. Po1ycrystall i ne semi conductors are in between. They are among the work- horses in the field, useful in many applications, a handy solution to many practical problems and still - they have not received in the past the amount of research interest that they deserve. It is the aim of the present book to improve this situation. The book originated from the lectures and seminars presented at the course on "Po1ycrystall i ne Semi conductors - Physical Properties and Applications" of "the International School on Materials Scien- ce and Technology, hel d at the Centre for Sci entifi c Culture "Ettore Majorana" in Erice, Italy, July 1-15, 1984.

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