menu

0
  • argentina
  • chile
  • colombia
  • españa
  • méxico
  • perú
  • estados unidos
  • internacional
portada Vapor Crystal Growth and Characterization: Znse and Related Ii-Vi Compound Semiconductors (in English)
Type
Physical Book
Publisher
Year
2020
Language
English
Pages
215
Format
Hardcover
ISBN13
9783030396541
Edition No.
1

Vapor Crystal Growth and Characterization: Znse and Related Ii-Vi Compound Semiconductors (in English)

Ching-Hua Su (Author) · Springer · Hardcover

Vapor Crystal Growth and Characterization: Znse and Related Ii-Vi Compound Semiconductors (in English) - Ching-Hua Su

Physical Book

$ 104.20

$ 109.99

You save: $ 5.79

5% discount
  • Condition: New
It will be shipped from our warehouse between Friday, June 21 and Monday, June 24.
You will receive it anywhere in United States between 1 and 3 business days after shipment.

Synopsis "Vapor Crystal Growth and Characterization: Znse and Related Ii-Vi Compound Semiconductors (in English)"

The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications.The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process.This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.

Customers reviews

More customer reviews
  • 0% (0)
  • 0% (0)
  • 0% (0)
  • 0% (0)
  • 0% (0)

Frequently Asked Questions about the Book

All books in our catalog are Original.
The book is written in English.
The binding of this edition is Hardcover.

Questions and Answers about the Book

Do you have a question about the book? Login to be able to add your own question.

Opinions about Bookdelivery

More customer reviews